onsemi_BC857CWT1G
original

onsemi
BC857CWT1G

276-BC857CWT1G
PDF Datasheet
PNP BJT Transistor, 45V, 100mA, 100MHz, SC-70
39 Weeks

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Tech Specifications

Package/Case
SC
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
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BC857CWT1G Description

BC857CWT1G Description

The BC857CWT1G is a PNP single bipolar transistor from onsemi, designed for high-frequency applications. It offers a maximum frequency of transition up to 100MHz, making it suitable for various RF and microwave circuits. With a maximum collector current (Ic) of 100mA and a Vce saturation of 650mV at 5mA and 100mA, the BC857CWT1G provides excellent performance in low-power applications. The device is surface mountable, with a tape & reel packaging for easy integration into automated assembly lines.

BC857CWT1G Features

  • High-Frequency Performance: With a maximum frequency of transition up to 100MHz, the BC857CWT1G is ideal for RF and microwave applications.
  • Low Power Consumption: The device has a maximum collector current (Ic) of 100mA and a Vce saturation of 650mV at 5mA and 100mA, making it suitable for low-power applications.
  • Surface Mountable: The BC857CWT1G is designed for surface mount applications, allowing for easy integration into automated assembly lines.
  • Robustness: The device has a maximum collector-emitter breakdown voltage of 45V, ensuring reliable operation in various electronic circuits.
  • Compliance: The BC857CWT1G is compliant with RoHS3 standards, making it suitable for environmentally conscious applications.

BC857CWT1G Applications

The BC857CWT1G is ideal for various applications, including:

  1. RF and Microwave Circuits: Due to its high-frequency performance, the BC857CWT1G is suitable for use in RF and microwave circuits, such as amplifiers and oscillators.
  2. Low-Power Amplifiers: The device's low power consumption makes it ideal for low-power amplifier applications, such as audio amplifiers and signal conditioning circuits.
  3. Automotive Electronics: The BC857CWT1G can be used in automotive electronics, such as engine control modules and infotainment systems, due to its robustness and compliance with RoHS3 standards.
  4. Industrial Control Systems: The device's high breakdown voltage and low power consumption make it suitable for industrial control systems, such as motor drivers and sensor interfaces.

Conclusion of BC857CWT1G

The BC857CWT1G is a versatile PNP single bipolar transistor that offers high-frequency performance, low power consumption, and robustness, making it suitable for a wide range of applications, including RF and microwave circuits, low-power amplifiers, automotive electronics, and industrial control systems. Its compliance with RoHS3 standards and surface mountability further enhance its appeal for modern electronic designs.

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