onsemi_BC857CWT1G

onsemi
BC857CWT1G  
Single Bipolar Transistors

onsemi
BC857CWT1G
276-BC857CWT1G
Ersa
onsemi-BC857CWT1G-datasheets-6180146.pdf
TRANS PNP 45V 0.1A SC70-3
In Stock : 56624

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BC857CWT1G Description

BC857CWT1G Description

The BC857CWT1G is a PNP single bipolar transistor from onsemi, designed for high-frequency applications. It offers a maximum frequency of transition up to 100MHz, making it suitable for various RF and microwave circuits. With a maximum collector current (Ic) of 100mA and a Vce saturation of 650mV at 5mA and 100mA, the BC857CWT1G provides excellent performance in low-power applications. The device is surface mountable, with a tape & reel packaging for easy integration into automated assembly lines.

BC857CWT1G Features

  • High-Frequency Performance: With a maximum frequency of transition up to 100MHz, the BC857CWT1G is ideal for RF and microwave applications.
  • Low Power Consumption: The device has a maximum collector current (Ic) of 100mA and a Vce saturation of 650mV at 5mA and 100mA, making it suitable for low-power applications.
  • Surface Mountable: The BC857CWT1G is designed for surface mount applications, allowing for easy integration into automated assembly lines.
  • Robustness: The device has a maximum collector-emitter breakdown voltage of 45V, ensuring reliable operation in various electronic circuits.
  • Compliance: The BC857CWT1G is compliant with RoHS3 standards, making it suitable for environmentally conscious applications.

BC857CWT1G Applications

The BC857CWT1G is ideal for various applications, including:

  1. RF and Microwave Circuits: Due to its high-frequency performance, the BC857CWT1G is suitable for use in RF and microwave circuits, such as amplifiers and oscillators.
  2. Low-Power Amplifiers: The device's low power consumption makes it ideal for low-power amplifier applications, such as audio amplifiers and signal conditioning circuits.
  3. Automotive Electronics: The BC857CWT1G can be used in automotive electronics, such as engine control modules and infotainment systems, due to its robustness and compliance with RoHS3 standards.
  4. Industrial Control Systems: The device's high breakdown voltage and low power consumption make it suitable for industrial control systems, such as motor drivers and sensor interfaces.

Conclusion of BC857CWT1G

The BC857CWT1G is a versatile PNP single bipolar transistor that offers high-frequency performance, low power consumption, and robustness, making it suitable for a wide range of applications, including RF and microwave circuits, low-power amplifiers, automotive electronics, and industrial control systems. Its compliance with RoHS3 standards and surface mountability further enhance its appeal for modern electronic designs.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

BC857CWT1G Documents

Download datasheets and manufacturer documentation for BC857CWT1G

Ersa Mult Dev 05/Dec/2019      
Ersa BC856B-58B      
Ersa BC856B-58B      
Ersa Copper Wire 19/May/2010      
Ersa onsemi RoHS       Material Declaration BC857CWT1G      

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