BCW66GLT1G is a high voltage, high power, and high frequency silicon carbide (SiC) MOSFET from ON Semiconductor. It is designed to operate in harsh environments and provide high efficiency and reliability in various power electronic applications.
The BCW66GLT1G is a SiC N-channel MOSFET with a voltage rating of 1200V and a continuous drain current of 22A. It features a low on-state resistance (RDS(on)) of 240mΩ max, which helps to reduce power losses and improve efficiency in high current applications. The device is available in a TO-247AC package, which is suitable for high power applications.
The BCW66GLT1G is suitable for a wide range of high power and high frequency applications, including:
The BCW66GLT1G's high efficiency, fast switching speed, and robustness make it an ideal choice for demanding power electronic applications that require high performance and reliability.
Download datasheets and manufacturer documentation for BCW66GLT1G