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BCX19LT1G

The BCX19LT1G is a high voltage, high current, low side N-channel power MOSFET from ON Semiconductor. It is designed for use in a wide range of power electronic applications, including motor control, power supplies, and battery management systems.

Description:

The BCX19LT1G is a lateral N-channel power MOSFET with a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of -19A. It features a logic level gate drive with a maximum gate-source voltage (VGS) of -20V and a threshold voltage (VTH) of typically 2V. The device has a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage, high current capability: -100V VDS and -19A ID
• Low on-state resistance: 4.5 milliohms maximum (typical)
• Logic level gate drive: -20V maximum VGS and 2V typical VTH
• Avalanche energy capable: 175 Joules
• Low gate charge: 42nC maximum
• High temperature operation: -55°C to +175°C

Applications:

The BCX19LT1G is suitable for a wide range of power electronic applications, including:

1. Motor control: Brushless DC (BLDC) motors, stepper motors, and other motor control applications.
2. Power supplies: AC/DC and DC/DC converters, including battery chargers and power adapters.
3. Battery management systems: Battery protection circuits and energy storage systems.
4. Lighting: LED driver circuits and other lighting applications.
5. Industrial control: Servo drives, robotic control systems, and other industrial applications.

The BCX19LT1G's high voltage and current ratings, along with its low on-state resistance and logic level gate drive, make it an ideal choice for applications requiring efficient and reliable power switching. Its high temperature operation range also allows it to be used in harsh environments where temperature fluctuations are common.