onsemi_BD239CTU
original

onsemi
BD239CTU

276-BD239CTU
PDF Datasheet
NPN BJT Transistor, 100V, 2A, TO-220

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
2A
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BD239CTU Description

BD239CTU Description

BD239CTU is a high-performance NPN transistor designed and manufactured by onsemi. This device is known for its exceptional electrical characteristics and robust construction, making it suitable for a wide range of applications. With an operating temperature of 150°C (TJ) and a maximum collector current of 2 A, BD239CTU is designed to handle high-power applications with ease. The device features a low Vce saturation of 700mV @ 200mA, 1A, ensuring efficient operation in various electronic circuits.

BD239CTU Features

  • NPN Transistor Type: BD239CTU is an NPN transistor, which is widely used in various electronic circuits due to its high current gain and low noise characteristics.
  • High Power Handling: With a maximum power rating of 30 W, BD239CTU can handle high-power applications, making it ideal for power amplifiers and switching circuits.
  • Low Vce Saturation: The low Vce saturation of 700mV @ 200mA, 1A ensures efficient operation and reduces power dissipation in the device.
  • High Collector-Emitter Breakdown Voltage: BD239CTU has a maximum collector-emitter breakdown voltage of 100 V, making it suitable for high-voltage applications.
  • Through Hole Mounting: The through-hole mounting type provides a secure and reliable connection to the circuit board, ensuring stable performance.
  • ROHS3 Compliant: BD239CTU is compliant with the RoHS3 directive, making it an environmentally friendly choice for electronic designs.

BD239CTU Applications

BD239CTU is ideal for various applications where high power handling, low noise, and high reliability are required. Some specific use cases include:

  1. Power Amplifiers: Due to its high power rating and low noise characteristics, BD239CTU is suitable for use in power amplifiers, providing high-quality audio output.
  2. Switching Circuits: The low Vce saturation and high collector-emitter breakdown voltage make BD239CTU an excellent choice for switching circuits, ensuring efficient operation and low power dissipation.
  3. Motor Controllers: BD239CTU can be used in motor control applications, providing high current gain and reliable operation in demanding environments.

Conclusion of BD239CTU

In conclusion, BD239CTU is a high-performance NPN transistor that offers exceptional electrical characteristics, making it ideal for various high-power and high-reliability applications. Its unique features, such as low Vce saturation, high collector-emitter breakdown voltage, and through-hole mounting, set it apart from similar models in the market. BD239CTU's compliance with RoHS3 and REACH directives further solidifies its position as an environmentally friendly and reliable choice for electronic designs.

FAQ

What voltage specification is listed for BD239CTU?
The listed voltage-related specification for BD239CTU is 100V.
Are there related or alternative parts for BD239CTU?
Is BD239CTU currently in stock?
What operating temperature range does BD239CTU support?
What package or case is BD239CTU available in?
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