onsemi_BD435G
original

onsemi
BD435G

276-BD435G
PDF Datasheet
NPN BJT Transistor, 32V, 4A, 3MHz, TO-225
0 weeks

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ISO9001
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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
500mV
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
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BD435G Description

Bipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole TO-126

FAQ

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Yes. BD435G currently shows 1873 unit(s) in stock.
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