onsemi_BD435STU
original

onsemi
BD435STU

276-BD435STU
PDF Datasheet
NPN BJT Transistor, 32V, 4A, 36W, TO-126

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Tech Specifications

Package/Case
TO-126
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current
4A
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BD435STU Description

Bipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole TO-126-3

FAQ

What voltage specification is listed for BD435STU?
The listed voltage-related specification for BD435STU is 32V.
What is BD435STU?
What operating temperature range does BD435STU support?
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