onsemi

BD681G

BD681G Description

The BD681G is a high-performance, single NPN bipolar transistor designed and manufactured by onsemi. With a maximum collector current of 4 A and a collector-emitter breakdown voltage of 100 V, this device is well-suited for a wide range of power electronics applications. The BD681G offers excellent DC current gain (hFE) of 750 at 1.5A and 3V, ensuring reliable performance in various circuits. This through-hole mounted device is available in bulk packaging and complies with RoHS3 regulations, making it an environmentally friendly choice.

BD681G Features

• Maximum collector current (Ic) of 4 A
• Collector-emitter breakdown voltage (Vce) of 100 V
• Low saturation voltage (Vce(sat)) of 2.5V @ 30mA and 1.5A
• High DC current gain (hFE) of 750 @ 1.5A and 3V
• Through-hole mounting type for easy integration
• Bulk packaging for cost-effectiveness
• RoHS3 compliant for environmental responsibility
• Active product status with EAR99 ECCN and REACH unaffected status

BD681G Applications

The BD681G's combination of high current handling, low saturation voltage, and excellent DC current gain make it an ideal choice for various power electronics applications. Some specific use cases include:

1. Power amplifiers and audio circuits
2. Switching regulators and power supplies
3. Motor control and drive circuits
4. Automotive electronics and lighting systems
5. Industrial control and automation systems

Conclusion of BD681G

The BD681G from onsemi is a versatile and reliable single NPN bipolar transistor that offers excellent performance in a wide range of power electronics applications. Its unique combination of high current handling, low saturation voltage, and high DC current gain make it a superior choice over similar models. With its RoHS3 compliance and active product status, the BD681G is an ideal solution for designers looking to create efficient and environmentally friendly electronic systems.