onsemi_BS107ARL1G
original

onsemi
BS107ARL1G

278-BS107ARL1G
PDF Datasheet
N-Channel JFET, 200V, 250mA, 6.4R, TO-92

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Tech Specifications

Package/Case
TO-92
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
250mA
Current Rating
250mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
6.4R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
6.4R
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BS107ARL1G Description

BS107ARL1G Description

The BS107ARL1G is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for various electronic applications. This N-Channel device offers a unique combination of high voltage and current capabilities, making it suitable for a wide range of applications. With an input capacitance (Ciss) of 60 pF at 25 V and a maximum drain-to-source voltage (Vdss) of 200 V, the BS107ARL1G provides excellent performance in high-voltage environments. The device is also designed to handle continuous drain current of 250 mA at 25°C, ensuring reliable operation in demanding conditions.

BS107ARL1G Features

  • High Voltage and Current Capabilities: With a maximum drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 250 mA at 25°C, the BS107ARL1G is ideal for high-voltage applications.
  • Low On-Resistance: The device features a low on-resistance (Rds On) of 6.4 Ohms at 250 mA and 10 V, ensuring efficient power dissipation and reduced power losses.
  • High Input Capacitance: The BS107ARL1G boasts an input capacitance (Ciss) of 60 pF at 25 V, enabling fast switching and improved performance in high-frequency applications.
  • Robust Thermal Management: The device can dissipate up to 350 mW of power at ambient temperature (Ta), ensuring reliable operation in high-temperature environments.
  • Through-Hole Mounting: The BS107ARL1G is available in a through-hole package, providing a secure and reliable connection to the circuit board.

BS107ARL1G Applications

The BS107ARL1G is an ideal choice for various applications where high voltage and current capabilities are required. Some specific use cases include:

  • Power Electronics: The high voltage and current ratings make the BS107ARL1G suitable for power electronics applications, such as power supplies and motor drives.
  • Automotive Electronics: The device's robust performance in high-voltage environments makes it ideal for automotive electronics, including battery management systems and electric vehicle components.
  • Industrial Control Systems: The BS107ARL1G can be used in industrial control systems, where high voltage and current capabilities are essential for reliable operation.

Conclusion of BS107ARL1G

The BS107ARL1G from onsemi is a high-performance MOSFET device designed for high-voltage and high-current applications. Its unique combination of technical specifications, such as low on-resistance, high input capacitance, and robust thermal management, make it an ideal choice for power electronics, automotive electronics, and industrial control systems. While the device is currently marked as obsolete, it remains a reliable option for applications where its specific performance characteristics are required.

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