onsemi_BSP16T1G
original

onsemi
BSP16T1G

276-BSP16T1G
PDF Datasheet
PNP BJT Transistor, 300V VCEO, 1A IC, SOT-223
12 Weeks

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Tech Specifications

Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
-350V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-2V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
2V
Current Rating
-1A
Emitter Base Voltage (VEBO)
6V
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BSP16T1G Description

BSP16T1G Description

The BSP16T1G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This single Bipolar Transistor features a 15MHz transition frequency, making it suitable for high-speed switching applications. With a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage of 300 V, the BSP16T1G offers excellent performance in various power management and signal amplification tasks.

BSP16T1G Features

  • High Transition Frequency: The 15MHz transition frequency of the BSP16T1G allows for fast switching and high-speed signal processing, making it ideal for applications requiring rapid response times.
  • Robust Power Handling: Capable of handling up to 1.5 W of power, the BSP16T1G is well-suited for power management applications where high power efficiency is crucial.
  • Low Saturation Voltage: The low Vce saturation voltage of 2V at 5mA and 50mA ensures minimal power loss during operation, improving overall efficiency.
  • High DC Current Gain: With a minimum DC current gain (hFE) of 30 at 50mA and 10V, the BSP16T1G provides excellent signal amplification capabilities.
  • Surface Mount Technology: The surface mount packaging of the BSP16T1G allows for easy integration into modern electronic devices, reducing overall footprint and improving manufacturing efficiency.
  • Compliance with Regulations: The BSP16T1G is compliant with RoHS3 standards, making it suitable for use in environmentally friendly products.

BSP16T1G Applications

The BSP16T1G is ideal for a wide range of applications due to its high performance and versatility:

  • Power Management: The high power handling and low saturation voltage make the BSP16T1G suitable for power management applications, such as voltage regulation and current limiting.
  • Signal Amplification: The high transition frequency and DC current gain make it an excellent choice for signal amplification in communication systems and audio equipment.
  • Automotive Electronics: The robustness and high breakdown voltage of the BSP16T1G make it suitable for use in automotive electronics, such as engine control units and power windows.
  • Industrial Control Systems: The BSP16T1G's high performance and reliability make it ideal for use in industrial control systems, where high power efficiency and signal integrity are crucial.

Conclusion of BSP16T1G

The BSP16T1G is a versatile and high-performance PNP bipolar transistor that offers excellent switching speed, power handling, and signal amplification capabilities. Its unique features, such as low saturation voltage and high DC current gain, make it an ideal choice for a wide range of applications, including power management, signal amplification, automotive electronics, and industrial control systems. With its compliance with RoHS3 standards and surface mount packaging, the BSP16T1G is a reliable and environmentally friendly solution for modern electronic devices.

FAQ

What voltage specification is listed for BSP16T1G?
The listed voltage-related specification for BSP16T1G is -350V.
What package or case is BSP16T1G available in?
What operating temperature range does BSP16T1G support?
What is the standard lead time for BSP16T1G?
What is BSP16T1G?
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