onsemi_BU406
original

onsemi
BU406

276-BU406
PDF Datasheet
NPN BJT 200V 7A TO-220 Transistor

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
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BU406 Description

The BU406 is a high-voltage, high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in high-power applications, such as power switching and amplification.

Description:

The BU406 is a Darlington transistor, which means it consists of two bipolar junction transistors (BJTs) connected in a way that their current gains are multiplied. This allows the BU406 to provide high current gain and high power handling capability.

Features:

  1. High collector-emitter voltage (Vce) of 1500V
  2. High collector current (Ic) of 5.0A
  3. High power dissipation capability
  4. Darlington configuration for high current gain
  5. Suitable for use in high-power switching and amplification applications

Applications:

  1. Power switching in motor control applications
  2. High-power amplifiers in audio and radio equipment
  3. Switching and amplification in industrial control systems
  4. High-voltage power supplies
  5. Motor speed control in various applications

In summary, the BU406 is a high-power Darlington transistor that is suitable for use in a variety of high-power applications. Its high voltage and current handling capabilities make it a popular choice for power switching and amplification.

FAQ

What is the mounting type of BU406?
BU406 uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for BU406?
What voltage specification is listed for BU406?
Is BU406 currently in stock?
What package or case is BU406 available in?
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