onsemi_BUH51G
original

onsemi
BUH51G

276-BUH51G
PDF Datasheet
NPN BJT 500V 3A TO-126 23MHz Power Transistor

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Tech Specifications

Package/Case
TO-126-3
Collector Base Voltage (VCBO)
800V
Collector Emitter Breakdown Voltage
500V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
500V
Collector-emitter Voltage-Max
500mV
Current Rating
3A
Emitter Base Voltage (VEBO)
10V
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BUH51G Description

Bipolar (BJT) Transistor NPN 500 V 3 A 23MHz 50 W Through Hole TO-126

FAQ

What voltage specification is listed for BUH51G?
The listed voltage-related specification for BUH51G is 800V.
What is BUH51G?
What is the mounting type of BUH51G?
Is BUH51G currently in stock?
What operating temperature range does BUH51G support?
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