onsemi

BVSS84LT1G

The BVSS84LT1G is a high voltage, high speed, N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

Description:

The BVSS84LT1G is a lateral N-channel MOSFET that features a low on-state resistance (RDS(on)) of 3.5 milliohms maximum at a gate-source voltage (VGS) of 10V. It also has a fast switching speed, with a typical gate charge (Qg) of 34 nC and a low input capacitance (Ciss) of 2200 pF. The device has a drain-source voltage (VDS) rating of -80V and a continuous drain current (ID) rating of 4.2A.

Features:

• Low on-state resistance (RDS(on)) of 3.5 milliohms max at VGS = 10V
• Fast switching speed with a typical gate charge (Qg) of 34 nC and low input capacitance (Ciss) of 2200 pF
• High drain-source voltage (VDS) rating of -80V
• Continuous drain current (ID) rating of 4.2A
• Suitable for use in power electronic applications such as motor control, power supplies, and automotive systems

Applications:

• Motor control
• Power supplies
• Automotive systems
• High voltage, high speed switching applications

The BVSS84LT1G is a high performance MOSFET transistor that offers excellent on-state resistance and switching speed characteristics, making it an ideal choice for a wide range of power electronic applications. Its high voltage and current ratings also make it suitable for use in demanding applications where high power levels are required.