onsemi_DTC114TET1G
original

onsemi
DTC114TET1G

292-DTC114TET1G
PDF Datasheet
NPN Digital Transistor 50V 100mA SOT-416 T/R
8 Weeks

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Tech Specifications

Package/Case
SOT-416-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Halogen Free
Halogen Free
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DTC114TET1G Description

DTC114TET1G Description

The DTC114TET1G is a high-performance, pre-biased NPN bipolar transistor designed for a wide range of applications in the electronics industry. Manufactured by onsemi, this single device offers exceptional technical specifications and performance benefits, making it an ideal choice for various applications. With a maximum collector current of 100 mA and a low saturation voltage of 250 mV at 1mA and 10mA, the DTC114TET1G delivers outstanding performance in demanding environments.

DTC114TET1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Maximum collector-emitter breakdown voltage (Vce): 50 V
    • Maximum power dissipation: 200 mW
    • Minimum DC current gain (hFE): 160 @ 5mA, 10V
    • Maximum collector cutoff current: 500 nA
    • Base resistor (R1): 10 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250 mV @ 1mA, 10mA
  • Performance Benefits:

    • Surface mount technology for easy integration
    • Active product status for reliable availability
    • RoHS3 compliant for environmental sustainability
    • REACH unaffected for regulatory compliance
    • Moisture sensitivity level (MSL) 1 for unlimited storage time
  • Unique Features and Advantages:

    • Pre-biased design for simplified circuit design and reduced component count
    • Low saturation voltage for improved efficiency in low-voltage applications
    • High current gain for better signal amplification and switching performance

DTC114TET1G Applications

The DTC114TET1G is ideal for a variety of applications where high performance, reliability, and efficiency are critical. Some specific use cases include:

  1. Amplifier Circuits: The high current gain and low saturation voltage make it suitable for audio and signal amplification applications.
  2. Switching Applications: The pre-biased design simplifies circuit design, making it ideal for switching applications in power management and control systems.
  3. Automotive Electronics: The DTC114TET1G's robust performance and reliability make it suitable for automotive electronics, such as engine control modules and infotainment systems.
  4. Industrial Control Systems: The device's ability to handle high current and voltage makes it suitable for industrial control systems, such as motor drives and process control.

Conclusion of DTC114TET1G

In conclusion, the DTC114TET1G is a versatile and high-performance pre-biased NPN bipolar transistor that offers exceptional technical specifications and performance benefits. Its unique features, such as the pre-biased design, low saturation voltage, and high current gain, make it an ideal choice for a wide range of applications in the electronics industry. With its active product status, RoHS3 compliance, and REACH unaffected status, the DTC114TET1G is a reliable and environmentally friendly solution for demanding applications.

FAQ

What voltage specification is listed for DTC114TET1G?
The listed voltage-related specification for DTC114TET1G is 50V.
What operating temperature range does DTC114TET1G support?
What is DTC114TET1G?
Are there related or alternative parts for DTC114TET1G?
What is the standard lead time for DTC114TET1G?
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