onsemi_DTC114YET1G
original

onsemi
DTC114YET1G

292-DTC114YET1G
PDF Datasheet
NPN Digital Transistor 50V 100mA SOT-416
9 Weeks

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Tech Specifications

Package / Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector - Emitter Voltage VCEO
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter- Base Voltage VEBO
6V
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DTC114YET1G Description

DTC114YET1G Description

The DTC114YET1G is a single pre-biased NPN bipolar transistor designed and manufactured by onsemi. This device is engineered to deliver exceptional performance in a wide range of applications. With a maximum collector current (Ic) of 100 mA, it ensures efficient power handling. The DTC114YET1G boasts a low Vce saturation of 250 mV at 300 µA and 10 mA, which contributes to its high efficiency in low-voltage applications. It is designed for surface mount applications, making it suitable for compact and space-constrained designs.

DTC114YET1G Features

  • Technical Specifications: The DTC114YET1G offers a maximum collector-emitter breakdown voltage of 50 V and can handle a maximum power dissipation of 200 mW. It features a high DC current gain (hFE) of at least 80 at 5 mA and 10 V, ensuring reliable operation in various circuits. The device also has a low current cutoff of 500 nA, which is beneficial for applications requiring precise current control.

  • Unique Advantages: The DTC114YET1G stands out with its low saturation voltage and high current gain, making it ideal for low-power, high-efficiency applications. Its surface mount design allows for easy integration into modern electronics, while its compliance with ROHS3 regulations ensures environmental sustainability.

DTC114YET1G Applications

The DTC114YET1G is well-suited for a variety of applications due to its combination of high efficiency and low power consumption. It is particularly ideal for:

  • Audio Amplifiers: Its low Vce saturation and high current gain make it suitable for audio amplifiers where low distortion and high fidelity are required.
  • Signal Processing: The device's ability to handle low currents with precision makes it an excellent choice for signal processing applications.
  • Power Management: In power management circuits, the DTC114YET1G's high breakdown voltage and low power dissipation ensure safe and efficient operation.

Conclusion of DTC114YET1G

The DTC114YET1G is a versatile and efficient pre-biased NPN bipolar transistor that offers a compelling combination of performance and reliability. Its unique features, such as low saturation voltage and high current gain, make it an excellent choice for a wide range of applications, from audio amplifiers to power management systems. With its commitment to environmental standards and compact surface mount design, the DTC114YET1G is a forward-thinking solution for modern electronics design.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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