onsemi

DTC123JM3T5G

DTC123JM3T5G Description

The DTC123JM3T5G is a pre-biased NPN bipolar transistor offered by onsemi, designed for single applications. This Surface Mount device boasts a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage of 50 V. It features a low Vce saturation of 250 mV at 1mA and 10mA, ensuring efficient operation in various electronic circuits. With a maximum power rating of 260 mW, the DTC123JM3T5G is suitable for low to medium power applications.

DTC123JM3T5G Features

• Technical Specifications:

  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Power - Max: 260 mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA

• Performance Benefits:

  • Low Vce saturation for efficient operation
  • High DC current gain for reliable signal amplification
  • Moisture Sensitivity Level (MSL) of 1, ensuring long-term stability

• Unique Advantages:

  • Pre-biased design simplifies circuit design and reduces external component requirements
  • Surface Mount packaging for compact and efficient board layout
  • Active product status, ensuring ongoing availability and support

DTC123JM3T5G Applications

The DTC123JM3T5G is ideal for various applications where a pre-biased NPN bipolar transistor is required. Some specific use cases include:

1. Low to Medium Power Amplifiers: Due to its low Vce saturation and high DC current gain, the DTC123JM3T5G is well-suited for amplifiers in consumer electronics, such as audio amplifiers and signal conditioning circuits.

2. Switching Applications: The device's ability to handle up to 100 mA of collector current makes it suitable for switching applications in power management circuits and motor control systems.

3. RF and Wireless Communication: The DTC123JM3T5G can be used in RF circuits for signal amplification and mixing, taking advantage of its low noise figure and high linearity.

Conclusion of DTC123JM3T5G

The DTC123JM3T5G is a versatile pre-biased NPN bipolar transistor from onsemi, offering a combination of performance, reliability, and ease of use. Its unique features, such as low Vce saturation, high DC current gain, and pre-biased design, make it an excellent choice for a wide range of applications, including low to medium power amplifiers, switching circuits, and RF communication systems. With ongoing support and availability, the DTC123JM3T5G is a reliable option for designers looking to incorporate a high-performance NPN bipolar transistor into their next project.