onsemi

ECH8690-TL-H

ECH8690-TL-H Description

The ECH8690-TL-H is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for applications requiring robust power handling and efficient switching. With a maximum power rating of 1.5W and a drain-to-source voltage of 60V, this N/P-CH MOSFET is capable of handling continuous drain currents of 4.7A at 25°C and 3.5A at high temperatures. Its low Rds On of 55mOhm @ 2A, 10V ensures minimal power dissipation and high efficiency in switching applications.

ECH8690-TL-H Features

• Operating Temperature: 150°C (TJ), allowing for reliable operation in high-temperature environments.
• FET Feature: Logic Level Gate, 4V Drive, enabling compatibility with low-voltage control signals.
• Input Capacitance (Ciss): 955pF @ 20V, 790pF @ 20V, minimizing capacitive loading and ensuring fast response times.
• Gate Charge (Qg): 18nC @ 10V, reducing switching losses and improving efficiency.
• Mounting Type: Surface Mount
• Rds On (Max): 55mOhm @ 2A, 10V, ensuring low conduction losses and high efficiency.
• Technology: MOSFET (Metal Oxide), providing excellent electrical isolation and high input impedance.
• REACH Status: REACH Unaffected, ensuring compliance with European regulations.
• RoHS Status: ROHS3 Compliant, adhering to environmental standards.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating no sensitivity to moisture, which is beneficial for outdoor applications.

ECH8690-TL-H Applications

The ECH8690-TL-H is ideal for a variety of applications where high power handling and efficient switching are required. Some specific use cases include:

• Power Electronics: In power supplies and converters, this MOSFET can handle the high currents and voltages involved.
• Automotive Systems: For applications such as electric vehicle charging systems, where high power and reliability are crucial.
• Industrial Control: In motor drives and control systems, where high efficiency and robustness are essential.
• Telecommunications: For power amplifiers and signal processing, where low distortion and high linearity are required.

Conclusion of ECH8690-TL-H

The ECH8690-TL-H from onsemi stands out for its combination of high power handling, low Rds On, and compatibility with logic level gate control. Its robust design, compliance with environmental standards, and suitability for a wide range of temperatures make it an excellent choice for demanding applications in power electronics, automotive systems, industrial control, and telecommunications. With its unique features and advantages, the ECH8690-TL-H offers a reliable and efficient solution for high-performance MOSFET applications.