onsemi_EFC6605R-V-TR
onsemi_EFC6605R-V-TR
original

onsemi
EFC6605R-V-TR

289-EFC6605R-V-TR
PDF Datasheet
MOSFET 2N-CH 20V 10A 6EFCP
45 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
2 N-Channel
Typical Turn-Off Delay Time (ns)
44400
Input Capacitance (Ciss) (Max) @ Vds
-
Gate Charge (Qg) (Max) @ Vgs
19.8nC @ 4.5V
Typical Rise Time (ns)
678
PPAP
No
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
154
Show More

EFC6605R-V-TR Description

EFC6605R-V-TR Description

The EFC6605R-V-TR is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for use in a variety of electronic applications. This 2N-channel MOSFET is rated for a maximum drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 10A at 25°C. The device is designed to operate at a maximum power dissipation of 1.6W and an operating temperature range of 150°C.

EFC6605R-V-TR Features

  • Logic Level Gate, 2.5V Drive: The EFC6605R-V-TR features a logic level gate that allows for easy integration with logic level control circuits, reducing the need for additional level shifters or drivers.
  • Low Rds On (Max) @ Id, Vgs: With a maximum Rds On of 13.3mOhm at 3A and 4.5V, the EFC6605R-V-TR offers low on-resistance, which minimizes power dissipation and improves efficiency in high-current applications.
  • Low Gate Charge (Qg) (Max) @ Vgs: The device has a low gate charge of 19.8nC at 4.5V, which reduces switching losses and improves overall efficiency.
  • Surface Mount: The EFC6605R-V-TR is available in a surface mount package, making it suitable for use in compact, high-density PCB designs.
  • ROHS3 Compliant: The device is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly applications.

EFC6605R-V-TR Applications

The EFC6605R-V-TR is ideal for use in a variety of applications where high performance and reliability are critical. Some specific use cases include:

  • Power Supplies: The device's high voltage and current ratings make it suitable for use in power supply designs, where high efficiency and low power dissipation are important.
  • Motor Control: The EFC6605R-V-TR's low on-resistance and low gate charge make it an excellent choice for motor control applications, where high efficiency and fast switching are critical.
  • Automotive Applications: The device's high temperature rating and robust performance make it suitable for use in automotive applications, where reliability and performance are critical.

Conclusion of EFC6605R-V-TR

The EFC6605R-V-TR is a high-performance MOSFET from onsemi that offers a unique combination of features and performance benefits. Its low on-resistance, low gate charge, and logic level gate make it an excellent choice for a variety of high-performance applications, including power supplies, motor control, and automotive applications. With its RoHS3 compliance and surface mount package, the EFC6605R-V-TR is an ideal choice for designers looking for a reliable, high-performance MOSFET solution.

FAQ

What is the mounting type of EFC6605R-V-TR?
EFC6605R-V-TR uses a Surface Mount mounting style based on the listed product specifications.
Is EFC6605R-V-TR currently in stock?
What package or case is EFC6605R-V-TR available in?
What is the standard lead time for EFC6605R-V-TR?
What voltage specification is listed for EFC6605R-V-TR?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ