onsemi_EMT1DXV6T1G

onsemi
EMT1DXV6T1G  
Bipolar Transistor Arrays

onsemi
EMT1DXV6T1G
277-EMT1DXV6T1G
Ersa
onsemi-EMT1DXV6T1G-datasheets-2370185.pdf
TRANS 2PNP 60V 0.1A SOT563
In Stock : 11703

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EMT1DXV6T1G Description

EMT1DXV6T1G Description

The EMT1DXV6T1G is a high-performance, dual PNP bipolar transistor array designed and manufactured by onsemi. This device is specifically engineered for applications requiring high-frequency signal amplification and switching. With a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA, the EMT1DXV6T1G is well-suited for a wide range of electronic systems.

EMT1DXV6T1G Features

  • High-Frequency Performance: The EMT1DXV6T1G boasts a transition frequency of 140MHz, making it ideal for high-speed switching and amplification applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 500mV at 5mA and 50mA, this device ensures efficient power management and low power dissipation.
  • Robust Current Handling: Capable of handling up to 100mA of collector current, the EMT1DXV6T1G is suitable for applications requiring substantial current drive.
  • Surface Mount Technology: Designed for surface mount applications, this transistor array simplifies the manufacturing process and enhances reliability.
  • Compliance and Certification: The EMT1DXV6T1G is EAR99 and REACH unaffected, ensuring compliance with international trade and environmental regulations.
  • DC Current Gain: With a minimum hFE of 120 at 1mA and 6V, this device offers consistent performance across a range of operating conditions.

EMT1DXV6T1G Applications

The EMT1DXV6T1G is an excellent choice for various applications due to its high-frequency capabilities and robust performance:

  • RF Amplification: Ideal for use in radio frequency applications where high-frequency signal amplification is required.
  • Switching Circuits: The low saturation voltage makes it suitable for power switching applications, ensuring efficient operation.
  • Automotive Electronics: With its ability to handle high voltages and currents, the EMT1DXV6T1G is well-suited for automotive electronics, such as ignition systems and sensor interfaces.
  • Industrial Control Systems: Reliable for use in industrial control systems where high switching speeds and voltage handling are critical.

Conclusion of EMT1DXV6T1G

The EMT1DXV6T1G from onsemi stands out as a versatile and high-performing dual PNP bipolar transistor array. Its unique combination of high-frequency capabilities, robust current handling, and low saturation voltage make it an ideal choice for a variety of applications, from RF amplification to high-speed switching circuits. With its compliance with international regulations and its surface mount design, the EMT1DXV6T1G is a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

EMT1DXV6T1G Documents

Download datasheets and manufacturer documentation for EMT1DXV6T1G

Ersa Process Change Notification (PDF)       General Announcement - 2D Barcoding (PDF)       PROCESS CHANGE NOTIFICATION (PDF)       Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd.       Product Change Notification (PDF)       Final Product / Process Change Notification (PDF)      

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