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FAD6263M1X

The FAD6263M1X is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FAD6263M1X is an N-channel, logic-level MOSFET with a drain-source voltage (VDS) rating of 650V and a continuous drain current (ID) rating of 3.6A. It features a low on-state resistance (RDS(on)) of 40 milliohms maximum at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.

Features:

• High-voltage, high-power MOSFET
• N-channel, logic-level
• VDS rating of 650V
• ID rating of 3.6A
• Low on-state resistance (RDS(on)) of 40 milliohms maximum at VGS of 10V
• Suitable for use in power electronic applications such as motor control, power supplies, and energy management systems

Applications:

• Motor control
• Power supplies
• Energy management systems
• Other power electronic applications requiring high-voltage, high-power switching

Note: The above information is based on the limited datasheet provided and may not be complete or up-to-date. It is always recommended to refer to the latest datasheet and consult with a qualified engineer before using any electronic component in a design.