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FCD5N60TM

The FCD5N60TM is a high voltage N-channel power MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and energy management systems.

Description:

The FCD5N60TM is a high voltage N-channel power MOSFET with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 5.4A at 25°C. It features a low on-state resistance (Rds(on)) of 75 milliohms maximum at a gate-source voltage (Vgs) of 10V, which helps to minimize power dissipation and improve efficiency in power conversion applications.

Features:

• N-channel, high voltage power MOSFET
• Maximum drain-source voltage (Vds) of 600V
• Continuous drain current (Id) of 5.4A at 25°C
• Low on-state resistance (Rds(on)) of 75 milliohms maximum at Vgs = 10V
• Logic level gate drive compatible
• Avalanche energy sustained: 85mJ
• Fast switching capability
• Low gate charge for high efficiency

Applications:

The FCD5N60TM is suitable for use in a wide range of power electronics applications, including:

• Motor control for industrial and automotive applications
• Power supplies for telecommunications and computer systems
• Energy management systems for renewable energy and grid-tied applications
• Battery management systems for electric vehicles and energy storage systems
• DC-DC converters for telecom and computing applications

In summary, the FCD5N60TM is a high voltage N-channel power MOSFET that offers high efficiency, fast switching, and low on-state resistance, making it an ideal choice for a variety of power electronics applications.