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FCH165N60E

The FCH165N60E is a high voltage N-channel power MOSFET from ON Semiconductor. It is designed for high voltage applications and offers excellent electrical characteristics and performance.

Description:

The FCH165N60E is a N-channel enhancement mode field effect transistor (MOSFET) that is designed for high voltage applications. It features a high voltage drain to source (Vds) rating of 600 volts and a continuous drain current (Id) of 65A. The device is available in a TO-220AB package, making it suitable for a wide range of applications.

Features:

• High voltage drain to source (Vds) rating of 600 volts
• Continuous drain current (Id) of 65A
• N-channel enhancement mode
• Low on-state resistance (Rds(on))
• High switching speed
• Low gate charge
• Suitable for a wide range of applications

Applications:

The FCH165N60E is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the key applications include:

• Switch mode power supplies (SMPS)
• Motor control
• Motor drive circuits
• High voltage power conversion
• Inverter circuits
• Industrial control systems
• Automotive applications
• Renewable energy systems
  Overall, the FCH165N60E is a high performance MOSFET that offers excellent electrical characteristics and performance for high voltage applications. Its low on-state resistance and high switching speed make it an ideal choice for power conversion and motor control applications.