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FCI25N60N-F102
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FCI25N60N-F102 Description
FCI25N60N-F102 Description
The FCI25N60N-F102 from onsemi is a 600V, 25A N-channel SupreMOS™ power MOSFET designed for high-efficiency switching applications. Housed in an I2PAK (TO-262) through-hole package, this device combines low on-resistance (125mΩ @ 12.5A, 10V) with fast switching characteristics, making it ideal for power conversion systems. Although marked as obsolete, its robust design and 216W (Tc) power dissipation ensure reliable performance in demanding environments. The MOSFET features a ±30V gate-source voltage (Vgs) rating and a low gate charge (74nC @ 10V), reducing switching losses and improving efficiency.
FCI25N60N-F102 Features
- High Voltage & Current Rating: 600V drain-source voltage (Vdss) and 25A continuous drain current (Id) at 25°C.
- Low Rds(on): 125mΩ (max) at 10V drive voltage, minimizing conduction losses.
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss = 3352pF @ 100V) enhance switching speed.
- SupreMOS™ Technology: Delivers superior performance in power efficiency and thermal management.
- Robust Packaging: I2PAK (TO-262) through-hole mount for secure mechanical and thermal performance.
- Compliance: ROHS3 compliant and REACH unaffected, meeting environmental standards.
FCI25N60N-F102 Applications
This MOSFET excels in:
- Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
- Motor Drives & Inverters: Efficient power switching in industrial and automotive systems.
- Uninterruptible Power Supplies (UPS): Reliable energy conversion with low losses.
- Lighting Systems: High-efficiency LED drivers and ballasts.
- Renewable Energy: Solar inverters and wind power converters.
Conclusion of FCI25N60N-F102
The FCI25N60N-F102 offers a balance of high voltage handling, low conduction losses, and fast switching, making it suitable for energy-efficient power systems. While obsolete, its SupreMOS™ technology and rugged design ensure it remains a viable choice for legacy or specialized applications requiring robust performance. Engineers should verify availability but can leverage its low Rds(on) and high thermal capability for demanding power electronics designs.



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