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FCMT099N65S3

FCMT099N65S3 Description

FCMT099N65S3 is a high-performance N-Channel MOSFET from onsemi, designed for power electronics applications. This device is part of the SuperFET® III series and offers superior performance in terms of power dissipation, drain current, and voltage handling. With a drain-source voltage rating of 650V and a continuous drain current of 30A at 25°C, the FCMT099N65S3 is well-suited for demanding power management tasks.

FCMT099N65S3 Features

• Technology: MOSFET (Metal Oxide) - Ensures high efficiency and low power loss.
• Drain to Source Voltage (Vdss): 650V - Capable of handling high voltage applications.
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc) - Delivers high current capacity for power electronics.
• Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V - Offers low on-resistance for improved efficiency.
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V - Minimizes switching losses.
• Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V - Facilitates faster switching speeds.
• Vgs (Max): ±30V - Provides flexibility in gate voltage requirements.
• Mounting Type: Surface Mount - Ideal for space-constrained applications.
• Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of environments.
• REACH Status: REACH Unaffected - Compliant with European chemical regulations.

FCMT099N65S3 Applications

The FCMT099N65S3 is ideal for applications where high power and voltage handling are required. Some specific use cases include:

• Power Supplies: Efficiently manage power in high-voltage power supply units.
• Motor Controls: Provide precise control and switching for electric motor drives.
• Industrial Automation: Enable reliable operation in harsh industrial environments.
• Renewable Energy: Support power management in solar and wind energy systems.

Conclusion of FCMT099N65S3

The FCMT099N65S3 from onsemi is a robust and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for high-performance power electronics applications. While it is marked as "Not For New Designs," it remains a reliable option for existing designs that require its specific performance characteristics.