onsemi_FCP190N60
original

onsemi
FCP190N60

278-FCP190N60
PDF Datasheet
N-Channel MOSFET, 600V, 20.2A, 199mR, TO-220

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
20.2A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
199mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
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FCP190N60 Description

N-Channel 600 V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3

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