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FDB0250N807L

FDB0250N807L Description

The FDB0250N807L is a high-performance N-Channel MOSFET from onsemi, designed for demanding power electronics applications. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 240A at 25°C, this MOSFET is capable of handling high power levels. It features a low on-resistance (Rds On) of 2.2mOhm at 30A and 10V Vgs, ensuring high efficiency and minimal power loss. The device is housed in a TO263-7 package, suitable for surface mount applications.

FDB0250N807L Features

• 80V drain-to-source voltage (Vdss)
• 240A continuous drain current (Id) at 25°C
• Low on-resistance (Rds On) of 2.2mOhm at 30A and 10V Vgs
• TO263-7 surface mount package
• PowerTrench® technology for improved performance
• ±20V maximum gate-to-source voltage (Vgs)
• 4V maximum threshold voltage (Vgs(th)) at 250µA Id
• 200nC maximum gate charge (Qg) at 10V Vgs
• 15.4nF maximum input capacitance (Ciss) at 40V Vds
• 3.8W maximum power dissipation at ambient temperature (Ta) and 214W at case temperature (Tc)
• RoHS3 compliant and REACH unaffected

FDB0250N807L Applications

The FDB0250N807L is ideal for a wide range of power electronics applications, including:

1. Motor drives and control
2. Power supplies and converters
3. Renewable energy systems, such as solar inverters
4. Electric vehicle (EV) charging infrastructure
5. Industrial automation and control systems

Conclusion of FDB0250N807L

The FDB0250N807L from onsemi is a powerful and efficient N-Channel MOSFET, designed for high-power applications. Its unique features, such as low on-resistance, high voltage and current ratings, and advanced PowerTrench® technology, make it an excellent choice for demanding power electronics applications. With its RoHS3 compliance and REACH unaffected status, the FDB0250N807L is an environmentally friendly solution for your power electronics needs.