onsemi_FDBL0150N80
original

onsemi
FDBL0150N80

278-FDBL0150N80
PDF Datasheet
N-Ch MOSFET, 80V, 300A, 1.4mΩ, TO-263
13 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
MO-299A
Number of Elements
1
Eccn Code
EAR99
Lead Free
Yes
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FDBL0150N80 Description

FDBL0150N80 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is a N-Channel, Logic Level Enhancement Mode device that is designed for low voltage, high current applications.

Description:

The FDBL0150N80 is a high-density, vertical D2PAK power MOSFET with a logic level gate drive. It is designed to operate at a voltage as low as 2.5V, making it suitable for use in low voltage systems. The device features a low on-state resistance (RDS(on)) of 1.5 milliohms, which allows it to handle high current loads.

Features:

  • N-Channel, Logic Level Enhancement Mode MOSFET
  • Low on-state resistance (RDS(on)) of 1.5 milliohms
  • Logic level gate drive for easy integration with low voltage control systems
  • High-density vertical D2PAK package for efficient thermal performance
  • Suitable for low voltage, high current applications

Applications:

The FDBL0150N80 is suitable for a wide range of applications that require low voltage, high current switching. Some of the potential applications include:

  • Motor control for industrial and automotive systems
  • Power management in battery-powered devices
  • DC-DC converters for power supply systems
  • High current switching in industrial control systems
  • Load switching in automotive and telecommunications systems

In summary, the FDBL0150N80 is a high-performance MOSFET that is designed for low voltage, high current applications. Its low on-state resistance and logic level gate drive make it an ideal choice for a wide range of industrial, automotive, and power management applications.

FAQ

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