onsemi_FDG6322C
FDG6322C(1)
FDG6322C(2)
FDG6322C(3)

onsemi
FDG6322C  
FET, MOSFET Arrays

onsemi
FDG6322C
289-FDG6322C
Ersa
onsemi-FDG6322C-datasheets-2354860.pdf
MOSFET N/P-CH 25V 0.22A SC88
In Stock : 15000

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    FDG6322C Description

    FDG6322C is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in high voltage applications, such as switch mode power supplies (SMPS), motor control, and power conversion circuits.

    Description:

    The FDG6322C is an N-channel MOSFET transistor that features a high voltage rating of 600V and a continuous drain current (Id) of up to 6.5A. It is available in a TO-220AB package, which is suitable for surface-mount applications.

    Features:

    1. High voltage rating of 600V
    2. Continuous drain current (Id) of up to 6.5A
    3. Low on-state resistance (RDS(on)) of 40 milliohms (maximum)
    4. Fast switching speed with a typical gate charge (Qg) of 34nC
    5. Low input capacitance (Ciss) of 1100pF (maximum)
    6. Suitable for use in high voltage applications such as switch mode power supplies (SMPS), motor control, and power conversion circuits
    7. Available in a TO-220AB package for surface-mount applications

    Applications:

    1. Switch mode power supplies (SMPS)
    2. Motor control
    3. Power conversion circuits
    4. High voltage switching applications
    5. DC-DC converters
    6. Inverters
    7. Battery management systems

    In summary, the FDG6322C is a high voltage N-channel MOSFET transistor that is designed for use in high voltage applications. It offers a high voltage rating of 600V, low on-state resistance, fast switching speed, and low input capacitance, making it suitable for a wide range of applications, including switch mode power supplies, motor control, and power conversion circuits.

    Tech Specifications

    Operating Temperature
    FET Feature
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    ECCN
    Mounting Type
    Product Status
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Series
    Package / Case
    Technology
    Power - Max
    REACH Status
    Mfr
    Current - Continuous Drain (Id) @ 25°C
    HTSUS
    Package
    RoHS Status
    Base Product Number
    Moisture Sensitivity Level (MSL)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    Typical Turn-Off Delay Time (ns)
    HTS
    Number of Elements per Chip
    ECCN (US)
    Typical Rise Time (ns)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    Package Length
    Standard Package Name
    Pin Count
    Mounting
    Part Status
    Package Width
    Typical Gate Charge @ Vgs (nC)

    FDG6322C Documents

    Download datasheets and manufacturer documentation for FDG6322C

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