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FDG6331L

The FDG6331L is a high voltage, high current N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including power supplies, motor control, and battery management systems.

Description:

The FDG6331L is a N-channel power MOSFET with a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 31A. It features a low on-state resistance (Rds(on)) of 4.5 mΩ max, which helps to minimize power dissipation and improve efficiency. The device also has a low input capacitance (Ciss) of 830 pF max, which allows for fast switching speeds.

Features:

• High voltage and current capability: Vds of 100V and Id of 31A
• Low on-state resistance (Rds(on)): 4.5 mΩ max
• Low input capacitance (Ciss): 830 pF max
• Avalanche energy capable: 75 Joules
• Logic level gate compatible
• Built-in body diode for efficient energy transfer in reverse conduction applications
• Suitable for use in a wide range of power conversion applications

Applications:

• Power supplies
• Motor control
• Battery management systems
• Inverters
• DC-DC converters
• Industrial control
• Renewable energy systems

The FDG6331L is available in a TO-220AB package, which is suitable for a wide range of power conversion applications. It is a reliable and efficient choice for designers looking for a high voltage, high current MOSFET for their power conversion needs.