onsemi_FDG6332C-F085

onsemi
FDG6332C-F085  
FET, MOSFET Arrays

onsemi
FDG6332C-F085
289-FDG6332C-F085
Ersa
onsemi-FDG6332C-F085-datasheets-5255777.pdf
MOSFET N/P-CH 20V 0.7A SC88
In Stock : 28

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $3.03120
    • $3.03
    • 10+
    • $2.19820
    • $21.98
    • 30+
    • $1.60330
    • $48.1
    • 100+
    • $1.46550
    • $146.55
    ADD TO CART
    QUICK ORDER
    $3.03120    $3.03
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    FDG6332C-F085 Description

    FDG6332C-F085 is a high-performance N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power management, and power conversion systems.

    Description:

    The FDG6332C-F085 is a N-channel power MOSFET transistor that features a high cell density for low on-state resistance (RDS(on)). It is available in a TO-220AB package, which is suitable for a wide range of power electronic applications.

    Features:

    • High cell density for low on-state resistance (RDS(on))
    • N-channel MOSFET transistor
    • Suitable for use in power electronic applications
    • Available in a TO-220AB package

    Applications:

    The FDG6332C-F085 is suitable for use in a variety of power electronic applications, including:

    • Motor control
    • Power management
    • Power conversion systems
    • Industrial control
    • Automotive applications
    • Renewable energy systems

    In summary, the FDG6332C-F085 is a high-performance N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. It features a high cell density for low on-state resistance and is available in a TO-220AB package, making it a versatile and reliable choice for a wide range of applications.

    Tech Specifications

    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Package / Case
    Technology
    REACH Status
    Mfr
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Qualification
    Power - Max
    Current - Continuous Drain (Id) @ 25°C
    HTSUS
    Package
    Base Product Number
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Supplier Package
    Maximum IDSS (uA)
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    Standard Package Name
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Typical Gate to Drain Charge (nC)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Typical Drain Source Resistance @ 25°C (mOhm)
    Typical Gate Threshold Voltage (V)
    Maximum Gate Source Voltage (V)
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

    FDG6332C-F085 Documents

    Download datasheets and manufacturer documentation for FDG6332C-F085

    Ersa Mult Device Part Number Chg 30/May/2017      
    Ersa Cancellation 09/Sep/2020      
    Ersa FDG6332C-F085      
    Ersa Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      
    Ersa On Semiconductor Automotive F085 Status Check      
    Ersa Mult Dev LTB Ext 13/Jan/2022      
    Ersa FDG6332C-F085      
    Ersa Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      
    Ersa onsemi RoHS       Material Declaration FDG6332C-F085       onsemi REACH      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service