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FDG6335N  

FET, MOSFET Arrays

The FDG6335N is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

Description:

The FDG6335N is an N-channel MOSFET transistor with a high input impedance, low output impedance, and fast switching capabilities. It features a high voltage rating of 100V and a continuous drain current of 33A. The device is available in a TO-220AB package.

Features:

• N-channel, high-power MOSFET transistor
• High voltage rating of 100V
• Continuous drain current of 33A
• High input impedance and low output impedance
• Fast switching capabilities
• Available in a TO-220AB package

Applications:

The FDG6335N is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Power converters
• Battery management systems
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers

Overall, the FDG6335N is a versatile and high-performance MOSFET transistor that can be used in a wide range of power electronic applications. Its high voltage rating, fast switching capabilities, and low output impedance make it an ideal choice for demanding power conversion and control applications.

FDG6335N Documents

Download datasheets and manufacturer documentation for FDG6335N

PCN Assembly/Origin :

Mult Dev 27/Sep/2023      

Datasheets :

FDG6335N      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

2N7002x/BSSx/FDGx/FDVx/NDS06x 10/May/2022       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       Material Declaration FDG6335N       onsemi REACH