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FDMD8240LET40

FDMD8240LET40 is a high voltage, high frequency MOSFET from ON Semiconductor. It is designed for use in a variety of power switching applications, including motor control, power supplies, and power converters.

Description:

The FDMD8240LET40 is an N-channel MOSFET with a breakdown voltage (V_DSS) of -100V. It has a continuous drain current (I_D) of 4.2A and a pulsed drain current (I_DM) of 18A. The device has a low on-state resistance (R_DS(on)) of 4.5 mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage, high frequency operation
• N-channel MOSFET
• Breakdown voltage (V_DSS) of -100V
• Continuous drain current (I_D) of 4.2A
• Pulsed drain current (I_DM) of 18A
• Low on-state resistance (R_DS(on)) of 4.5 mOhm max
• Suitable for use in power switching applications

Applications:

• Motor control
• Power supplies
• Power converters
• Class D audio amplifiers
• DC-DC converters
• Battery management systems
• Energy harvesting systems
• Any application that requires a high voltage, high frequency MOSFET.

In summary, the FDMD8240LET40 is a high voltage, high frequency MOSFET that is designed for use in power switching applications. It has a breakdown voltage of -100V, a continuous drain current of 4.2A, and a low on-state resistance of 4.5 mOhm max. It is suitable for use in a variety of applications, including motor control, power supplies, and power converters.