onsemi Tariff Inquiry

FDME1024NZT

The FDME1024NZT is a high voltage N-channel MOSFET transistor offered by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The FDME1024NZT is a high voltage N-channel MOSFET transistor that features a drain-source voltage (VDS) of up to 1000V, a continuous drain current (ID) of up to 4.5A, and a gate-source voltage (VGS) of up to 20V. It has a low on-state resistance (RDS(on)) of typically 45mΩ, which makes it suitable for high efficiency applications.

Features:

1. High voltage rating: The FDME1024NZT can handle high voltages up to 1000V, making it suitable for use in high voltage applications.
2. Low on-state resistance: The low RDS(on) of typically 45mΩ allows for high efficiency and low power loss.
3. High gate-source voltage: The high VGS of up to 20V allows for easy control and compatibility with a wide range of gate drive circuits.
4. Avalanche energy capable: The FDME1024NZT is designed to withstand high energy pulses during avalanche conditions, making it suitable for use in applications with high energy transients.

Applications:

1. Motor control: The FDME1024NZT is suitable for use in motor control applications, such as in industrial machinery and automotive systems.
2. Power supplies: The high voltage rating and low on-state resistance make the FDME1024NZT suitable for use in power supply applications, such as in switching power supplies and battery chargers.
3. Renewable energy systems: The FDME1024NZT can be used in renewable energy systems, such as solar panel inverters and wind turbine converters, to provide efficient power conversion and control.

Overall, the FDME1024NZT is a versatile and high-performance MOSFET transistor that can be used in a variety of power electronic applications requiring high voltage and high efficiency.