onsemi_FDMJ1032C
original

onsemi
FDMJ1032C

289-FDMJ1032C
PDF Datasheet
MOSFET N/P-CH 20V 3.2A/2.5A SC75

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Tech Specifications

Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
20V
Fall Time
18ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Input Capacitance
270pF
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FDMJ1032C Description

Mosfet Array 20V 3.2A, 2.5A 800mW Surface Mount SC-75, MicroFET

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