onsemi

FDMS10C4D2N  

Single FETs, MOSFETs

FDMS10C4D2N Description

The FDMS10C4D2N is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage of 100V and a continuous drain current of 17A at 25°C, this device is well-suited for a variety of power electronics applications.

FDMS10C4D2N Features

• Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the FDMS10C4D2N offers superior performance and reliability.
• Low On-Resistance: With a maximum Rds(on) of 4.2mOhm at 44A and 10V, this MOSFET minimizes power losses and improves efficiency.
• High Input Capacitance: The maximum input capacitance (Ciss) of 4500 pF at 50V ensures fast switching speeds and reduced noise.
• Low Gate Charge: A maximum gate charge (Qg) of 65 nC at 10V contributes to lower power consumption and faster switching times.
• Robust Voltage Ratings: Capable of handling a maximum gate-source voltage (Vgs) of ±20V and a drain-source voltage (Vdss) of 100V, this MOSFET is suitable for high-voltage applications.
• Power Dissipation: The FDMS10C4D2N can dissipate up to 125W (Tc), making it ideal for power-intensive applications.
• Mounting Type: Surface mount packaging allows for easy integration into various electronic devices.

FDMS10C4D2N Applications

The FDMS10C4D2N is ideal for a wide range of applications, including:

• Power Supplies: Due to its high voltage and current ratings, this MOSFET is well-suited for use in power supply designs.
• Motor Controls: The low on-resistance and high current capabilities make it an excellent choice for motor control applications.
• Automotive Electronics: The robust voltage and power ratings, along with the surface mount packaging, make this MOSFET suitable for automotive electronics.
• Industrial Controls: The FDMS10C4D2N's performance characteristics make it a reliable choice for industrial control systems.

Conclusion of FDMS10C4D2N

The FDMS10C4D2N from onsemi is a high-performance N-Channel MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its advanced technology and robust design make it an ideal choice for a variety of power electronics applications, including power supplies, motor controls, automotive electronics, and industrial controls. With its unique features and advantages, the FDMS10C4D2N stands out as a reliable and efficient solution in the electronics industry.

FDMS10C4D2N Documents

Download datasheets and manufacturer documentation for FDMS10C4D2N

PCN Assembly/Origin :

Mult PN ASSY/DES 17/Oct/2023      

Datasheets :

FDMS10C4D2N      

PCN Packaging :

Mult Devices 24/Oct/2017      

HTML Datasheet :

FDMS10C4D2N      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       Material Declaration FDMS10C4D2N