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FDMS3660S  

FET, MOSFET Arrays

The FDMS3660S is a high voltage, high frequency MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power conversion, and power management.

Description:

The FDMS3660S is a N-channel MOSFET with a voltage rating of 100V and a continuous drain current of 9A. It features a low on-state resistance (RDS(on)) of 55mOhm max, which helps to minimize power losses and improve efficiency. The device also has a fast switching speed, with a gate charge (Qg) of 44nC max and a typical switching time of 55ns.

Features:

• 100V, 9A N-channel MOSFET
• Low on-state resistance (RDS(on)) of 55mOhm max
• Fast switching speed with a gate charge (Qg) of 44nC max
• Logic level gate drive for easy integration with microcontrollers
• Avalanche energy rating of 1750mJ
• Built-in body diode for efficient energy transfer in reverse conduction applications
• Available in a compact TO-220 package

Applications:

The FDMS3660S is suitable for a wide range of applications, including:

• Motor control in industrial and automotive systems
• Power conversion and management in battery chargers, power supplies, and inverters
• Switching and regulation in class D audio amplifiers and other high-efficiency power electronics
• Load switching in portable devices and battery-powered equipment

Overall, the FDMS3660S is a versatile and high-performance MOSFET that can help to improve the efficiency and reliability of a wide range of power electronic systems.

FDMS3660S Documents

Download datasheets and manufacturer documentation for FDMS3660S