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FDMS7602S

The FDMS7602S is a high-performance, high-power discrete gallium nitride (GaN) transistor from ON Semiconductor. It is designed for use in a wide range of applications, including power conversion, motor drives, and renewable energy systems.

Description:

The FDMS7602S is a normally-off enhancement mode gallium nitride transistor. It features a high breakdown voltage of 100V, a low on-resistance of 65mΩ, and a high input capacitance of 1200pF. The device is available in a compact TO-263-5 package, making it suitable for use in space-constrained applications.

Features:

• High breakdown voltage of 100V
• Low on-resistance of 65mΩ
• High input capacitance of 1200pF
• Normally-off enhancement mode operation
• Suitable for use in a wide range of applications, including power conversion, motor drives, and renewable energy systems
• Available in a compact TO-263-5 package

Applications:

• Power conversion systems, such as AC/DC and DC/DC converters
• Motor drives for industrial and automotive applications
• Renewable energy systems, such as solar power inverters and wind turbine converters
• Class-D audio amplifiers
• High-efficiency power supplies for computing and telecommunications equipment

Overall, the FDMS7602S is a versatile and high-performance GaN transistor that offers excellent electrical characteristics and a compact form factor. Its normally-off enhancement mode operation and low on-resistance make it an ideal choice for a wide range of power conversion and motor drive applications.