onsemi_FDMS8025S

onsemi
FDMS8025S  
Single FETs, MOSFETs

onsemi
FDMS8025S
278-FDMS8025S
Ersa
onsemi-FDMS8025S-datasheets-5863981.pdf
MOSFET N-CH 30V 24A/49A 8PQFN
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FDMS8025S Description

The FDMS8025S is a high voltage, high frequency MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The FDMS8025S is a N-channel MOSFET with a voltage rating of up to 20V and a continuous drain current of up to 22A. It features a low on-state resistance (RDS(on)) of 35mOhm max, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a low input capacitance (Ciss) of 830pF.

Features:

  • High voltage rating: 20V
  • High continuous drain current: 22A
  • Low on-state resistance (RDS(on)): 35mOhm max
  • Fast switching speed: typical gate charge (Qg) of 44nC and low input capacitance (Ciss) of 830pF
  • Integrated bootstrap diode: reduces complexity and improves efficiency in high voltage applications
  • Avalanche energy capable: can withstand high energy pulses during operation
  • Low gate charge: reduces switching losses and improves efficiency
  • High temperature operation: suitable for use in harsh environments

Applications:

  • Motor control: brushless DC motors, stepper motors, and induction motors
  • Power supplies: AC/DC and DC/DC converters
  • Renewable energy systems: solar panel inverters, wind turbine converters
  • Battery management systems: battery chargers and protection circuits
  • Industrial controls: variable frequency drives and servo motor controllers
  • Automotive applications: electric power steering and battery management systems

The FDMS8025S is a versatile and high-performance MOSFET that can be used in a wide range of power electronic applications. Its high voltage rating, fast switching speed, and low on-state resistance make it an excellent choice for designers looking to improve the efficiency and performance of their power electronic systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Lead Shape
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

FDMS8025S Documents

Download datasheets and manufacturer documentation for FDMS8025S

Ersa Wafer 6/8 Inch Addition 16/Jun/2014      
Ersa FDMS8025S      
Ersa Mult Devices 24/Oct/2017      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDMS8025S      

Shopping Guide

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