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FDMT80080DC

FDMT80080DC is a high-power discrete gallium nitride (GaN) transistor offered by ON Semiconductor. This device is designed for high-frequency, high-efficiency power conversion applications.

Description:

The FDMT80080DC is a normally-off gallium nitride (GaN) transistor in a TO-247AC package. It features a high voltage rating of 650V and a continuous drain current of 30A. The device has a low on-resistance of 75mΩ, which helps to minimize power dissipation and improve efficiency.

Features:

• GaN technology for high efficiency and fast switching
• High voltage rating of 650V
• Continuous drain current of 30A
• Low on-resistance of 75mΩ
• Normally-off device for improved safety
• TO-247AC package for easy thermal management

Applications:

The FDMT80080DC is suitable for a wide range of high-power applications, including:

1. Power supply applications such as AC/DC converters, server power supplies, and telecom power systems.
2. Motor drive applications such as industrial motor control, robotics, and electric vehicles.
3. Renewable energy applications such as solar inverters and wind turbine converters.
4. Battery charging systems for electric vehicles and energy storage systems.
5. High-efficiency power conversion systems for data centers and industrial automation.

In summary, the FDMT80080DC is a high-power GaN transistor that offers high efficiency, fast switching, and improved safety for a wide range of power conversion applications. Its low on-resistance and high voltage rating make it an ideal choice for high-frequency, high-current applications.