onsemi

FDN537N

The FDN537N is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and switching regulators.

Description:

The FDN537N is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of -55V and a continuous drain current (ID) of 4.2A. It features a low on-state resistance (RDS(on)) of 55 mOhm maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• N-channel, enhancement mode MOSFET
• Drain-to-source voltage (VDS) of -55V
• Continuous drain current (ID) of 4.2A
• Low on-state resistance (RDS(on)) of 55 mOhm maximum
• Fast switching capability with a typical gate charge (Qg) of 34nC
• Logic level compatible with a low input capacitance (Ciss) of 830pF
• Avalanche energy (EAS) of 80mJ
• Suitable for use in a wide range of power electronic applications

Applications:

The FDN537N is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Switching regulators
• Class D audio amplifiers
• DC-DC converters
• Inverters
• Battery management systems

Overall, the FDN537N is a high performance MOSFET that offers excellent electrical characteristics and is well-suited for use in a wide range of power electronic applications. Its low on-state resistance and fast switching capability make it an ideal choice for applications that require high efficiency and low power dissipation.