onsemi Tariff Inquiry

FDN86265P

FDN86265P is a high voltage N-channel power MOSFET manufactured by ON Semiconductor. It is designed for high efficiency and low switching losses in a variety of power conversion applications.

Description:

The FDN86265P is a N-channel power MOSFET with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 55mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage rating: 600V VDS
• High current capability: 18A ID
• Low on-state resistance: 55mOhm max (typical)
• Fast switching speed: 3.6ns gate charge (Qg) and 42ns output charge (Qoss)
• Low gate drive requirements: 4.5V to 10V
• Avalanche energy capable: 200mJ
• Built-in body diode for efficient reverse recovery

Applications:

The FDN86265P is suitable for a wide range of power conversion applications, including:

1. Switch mode power supplies (SMPS)
2. DC-DC converters
3. Motor control applications
4. Class D audio amplifiers
5. Power factor correction (PFC) circuits
6. Battery charging and management systems
7. Telecommunications equipment

The FDN86265P is available in a TO-220 package, making it suitable for both through-hole and surface-mount applications. Its high efficiency and low switching losses make it an excellent choice for power conversion applications where performance and reliability are critical.