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FDP045N10A-F102  

Single FETs, MOSFETs

FDP045N10A-F102 is a type of N-channel power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FDP045N10A-F102 is a high-power, high-voltage MOSFET transistor that features a low on-state resistance (RDS(on)) of 0.45 ohms maximum at a gate-source voltage (VGS) of 10V. It also has a high breakdown voltage (VDS) of 100V, making it suitable for use in high-voltage applications.

Features:

• N-channel, high-power MOSFET transistor
• Low on-state resistance (RDS(on)) of 0.45 ohms maximum at VGS = 10V
• High breakdown voltage (VDS) of 100V
• Suitable for use in high-voltage power electronic applications
• Manufactured by ON Semiconductor

Applications:

The FDP045N10A-F102 can be used in a variety of power electronic applications, including:

• Motor control systems
• Power supplies
• Energy management systems
• Inverters
• Switch mode power supplies (SMPS)
• Battery management systems
• Industrial control systems

Overall, the FDP045N10A-F102 is a high-power, high-voltage MOSFET transistor that is well-suited for use in a variety of power electronic applications. Its low on-state resistance and high breakdown voltage make it an ideal choice for applications that require efficient and reliable power management.

FDP045N10A-F102 Documents

Download datasheets and manufacturer documentation for FDP045N10A-F102

PCN Part Number :

Mult Device Part Number Chg 30/May/2017      

PCN Assembly/Origin :

Mult Dev Mold Chg 28/Oct/2019      

Datasheets :

FDP045N10A, FDI045N10A      

PCN Packaging :

Mult Devices 24/Oct/2017      

HTML Datasheet :

FDP045N10A, FDI045N10A      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FDP045N10A-F102