onsemi_FDP2D3N10C
original

onsemi
FDP2D3N10C

278-FDP2D3N10C
PDF Datasheet
N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 222A, 2.3mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 222A, 2.3mΩ, 800-TUBE
26 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
1
Lead Free
Yes
REACH
Compliant
Military Spec
False

FDP2D3N10C Description

FDP2D3N10C Description

The FDP2D3N10C is a high-performance MOSFET (Metal Oxide) manufactured by onsemi, designed for single FET applications. This N-Channel device offers a unique combination of technical specifications that make it ideal for various power electronics applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 222A at 25°C, the FDP2D3N10C delivers exceptional performance in demanding environments.

FDP2D3N10C Features

  • High Drain Current: The FDP2D3N10C can handle a continuous drain current of 222A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 2.3mOhm at 100A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Gate Charge: The maximum gate charge (Qg) of 152nC at 10V ensures fast switching and reduced switching losses.
  • Wide Voltage Range: The device operates within a gate-source voltage (Vgs) range of ±20V, providing flexibility in various applications.
  • PowerTrench® Technology: This advanced technology enables high efficiency, low on-resistance, and improved thermal performance.
  • Environmental Compliance: The FDP2D3N10C is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.

FDP2D3N10C Applications

The FDP2D3N10C is ideal for various high-power applications, including:

  1. Power Supplies: Due to its high current handling capability and low on-resistance, it is suitable for power supply designs.
  2. Motor Controls: The device's robust performance makes it ideal for motor control applications, where high current and voltage ratings are required.
  3. Industrial Automation: Its ability to handle high power and voltage makes it suitable for industrial automation systems.
  4. Renewable Energy Systems: The FDP2D3N10C can be used in solar inverters and wind energy systems, where high efficiency and reliability are critical.

Conclusion of FDP2D3N10C

The FDP2D3N10C is a powerful MOSFET that offers a unique combination of high current handling, low on-resistance, and robust performance. Its advanced PowerTrench® technology, combined with its environmental compliance, makes it an ideal choice for a wide range of high-power applications. With its ability to handle demanding conditions, the FDP2D3N10C is a reliable and efficient solution for power electronics design.

FAQ

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Availability (In Stock : 11 )
Quantity Unit Price Ext. Price
1+ $12.84343 $12.84
10+ $11.14285 $111.43
30+ $10.10572 $303.17
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