onsemi_FDP2D3N10C

onsemi
FDP2D3N10C  
Single FETs, MOSFETs

onsemi
FDP2D3N10C
278-FDP2D3N10C
Ersa
onsemi-FDP2D3N10C-datasheets-5871836.pdf
MOSFET N-CH 100V 222A TO220-3
In Stock : 615

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FDP2D3N10C Description

FDP2D3N10C Description

The FDP2D3N10C is a high-performance MOSFET (Metal Oxide) manufactured by onsemi, designed for single FET applications. This N-Channel device offers a unique combination of technical specifications that make it ideal for various power electronics applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 222A at 25°C, the FDP2D3N10C delivers exceptional performance in demanding environments.

FDP2D3N10C Features

  • High Drain Current: The FDP2D3N10C can handle a continuous drain current of 222A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 2.3mOhm at 100A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Gate Charge: The maximum gate charge (Qg) of 152nC at 10V ensures fast switching and reduced switching losses.
  • Wide Voltage Range: The device operates within a gate-source voltage (Vgs) range of ±20V, providing flexibility in various applications.
  • PowerTrench® Technology: This advanced technology enables high efficiency, low on-resistance, and improved thermal performance.
  • Environmental Compliance: The FDP2D3N10C is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.

FDP2D3N10C Applications

The FDP2D3N10C is ideal for various high-power applications, including:

  1. Power Supplies: Due to its high current handling capability and low on-resistance, it is suitable for power supply designs.
  2. Motor Controls: The device's robust performance makes it ideal for motor control applications, where high current and voltage ratings are required.
  3. Industrial Automation: Its ability to handle high power and voltage makes it suitable for industrial automation systems.
  4. Renewable Energy Systems: The FDP2D3N10C can be used in solar inverters and wind energy systems, where high efficiency and reliability are critical.

Conclusion of FDP2D3N10C

The FDP2D3N10C is a powerful MOSFET that offers a unique combination of high current handling, low on-resistance, and robust performance. Its advanced PowerTrench® technology, combined with its environmental compliance, makes it an ideal choice for a wide range of high-power applications. With its ability to handle demanding conditions, the FDP2D3N10C is a reliable and efficient solution for power electronics design.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

FDP2D3N10C Documents

Download datasheets and manufacturer documentation for FDP2D3N10C

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