onsemi_FDP39N20
original

onsemi
FDP39N20

278-FDP39N20
N-Channel Power MOSFET, 200V, 39A, 66mR, TO-220
99 weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
39A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
66mR
Drain to Source Voltage (Vdss)
200V
Element Configuration
Single
Fall Time
150ns
Gate to Source Voltage (Vgs)
30V
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FDP39N20 Description

FDP39N20 Description

The FDP39N20 is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 200V and a continuous drain current of 39A at 25°C, this device is well-suited for demanding power electronics applications. The FDP39N20 features a low on-resistance of 66mOhm at 19.5A and 10V, ensuring minimal power dissipation and high efficiency. Additionally, its maximum gate-source voltage of ±30V provides flexibility in gate drive requirements. The device is packaged in a through-hole TO-220-3 package, making it suitable for a wide range of applications.

FDP39N20 Features

  • N-Channel MOSFET with 200V drain-to-source voltage and 39A continuous drain current
  • Low on-resistance of 66mOhm at 19.5A and 10V for high efficiency
  • Maximum gate-source voltage of ±30V for flexible gate drive requirements
  • Through-hole TO-220-3 package for easy integration into various applications
  • RoHS3 compliant and REACH unaffected, ensuring environmental compliance
  • Moisture sensitivity level (MSL) not applicable, simplifying handling and storage

FDP39N20 Applications

The FDP39N20 is ideal for a variety of power electronics applications, including:

  1. Power supplies and converters
  2. Motor drives and control
  3. Battery management systems
  4. Industrial automation and control
  5. Renewable energy systems, such as solar and wind power inverters

Its high voltage rating, low on-resistance, and robust current handling capabilities make it a versatile choice for applications requiring efficient power switching and control.

Conclusion of FDP39N20

The FDP39N20 is a high-performance N-Channel MOSFET from onsemi, offering a combination of high voltage, low on-resistance, and robust current handling capabilities. Its flexible gate drive requirements, environmental compliance, and versatile packaging make it an ideal choice for a wide range of power electronics applications. While the device is now considered obsolete, it remains a reliable option for existing designs and applications where its unique performance characteristics are required.

FAQ

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Yes. FDP39N20 currently shows 1713 unit(s) in stock.
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Availability (In Stock : 1713 )
Quantity Unit Price Ext. Price
10+ $2.11715 $21.17
50+ $1.65600 $82.80
100+ $1.54457 $154.46
500+ $1.49485 $747.42
1000+ $1.47257 $1472.57
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