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FDP51N25

The FDP51N25 is a high-power, high-voltage N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and power converters.

Description:

The FDP51N25 is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of 250 volts and a continuous drain current (ID) of 51 amperes. It has a low on-state resistance (RDS(on)) of 0.055 ohms maximum at a gate-to-source voltage (VGS) of 10 volts.

Features:

• High-power, high-voltage MOSFET
• Low on-state resistance (RDS(on))
• High drain-to-source voltage (VDS)
• High continuous drain current (ID)
• Enhancement mode
• Suitable for a wide range of applications

Applications:

The FDP51N25 is suitable for use in a variety of applications, including:

• Motor control
• Power supplies
• Power converters
• Inverters
• Battery management systems
• Industrial control systems

Overall, the FDP51N25 is a high-power, high-voltage MOSFET that offers excellent performance in a wide range of applications. Its low on-state resistance and high drain current make it an ideal choice for applications that require efficient power switching and control.