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FDP61N20

The FDP61N20 is a N-Channel Power MOSFET from ON Semiconductor. It is designed for low voltage, high current applications and is suitable for use in a variety of power electronic circuits.

Description:

The FDP61N20 is a N-Channel Power MOSFET with an N-Channel, Logic Level enhancement mode Field-Effect Transistor in a TO-220 package. It has a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 61A and a pulsed drain current (IDM) of 90A.

Features:

• Low on-state resistance (RDS(on)) of 5.8 mOhm max at 10V and 25°C
• Logic level gate drive for easy interface with standard logic circuits
• High input impedance
• Low gate charge
• Avalanche energy rating of 80 Joules
• Suitable for use in a wide range of power electronic circuits

Applications:

The FDP61N20 is suitable for use in a variety of power electronic circuits, including:

• DC-DC converters
• Motor drivers
• Power supplies
• Inverters
• Battery management systems
• Industrial control systems

It is also suitable for use in automotive and telecommunications equipment, as well as other applications that require low voltage, high current switching.

It's worth noting that the FDP61N20 is a discontinued product, so it may be difficult to find it in the market, but it's still widely used in many applications and it's a good example of a low voltage, high current MOSFET.