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FDPF18N50

FDPF18N50 is a high voltage N-channel power MOSFET from ON Semiconductor. It is designed for high efficiency and low switching losses in a variety of power switching applications.

Description:

The FDPF18N50 is an N-channel power MOSFET with a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 18A, and a gate-source voltage (VGS) of ±20V. It is available in a TO-220AB package, which is suitable for a wide range of power switching applications.

Features:

• High drain-source voltage (VDS) of 500V
• Continuous drain current (ID) of 18A
• Low on-state resistance (RDS(on)) of 4.5 milliohms maximum at VGS = 10V
• Fast switching speed with a gate charge (Qg) of 46nC maximum at VGS = 10V
• Logic level gate drive compatible
• Avalanche energy rated to support high energy pulse applications

Applications:

The FDPF18N50 is suitable for a wide range of power switching applications, including:

• Motor control
• Switch mode power supplies (SMPS)
• Power converters
• Inverters
• Battery charger circuits
• Industrial control systems
• Class D audio amplifiers
  In summary, the FDPF18N50 is a high voltage N-channel power MOSFET that offers high efficiency and low switching losses in a variety of power switching applications. Its high drain-source voltage, continuous drain current, and fast switching speed make it an ideal choice for demanding power switching applications.