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FDWS86368-F085

The FDWS86368-F085 is a high-power, high-voltage MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The FDWS86368-F085 is a N-channel MOSFET with a drain-source voltage (VDS) of 850V and a continuous drain current (ID) of 63A. It features a low on-state resistance (RDS(on)) of 0.08 Ohms maximum, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a low input capacitance (Ciss) of 4500pF.

Features:

• High drain-source voltage (VDS) of 850V
• Continuous drain current (ID) of 63A
• Low on-state resistance (RDS(on)) of 0.08 Ohms maximum
• Fast switching speed with a typical gate charge (Qg) of 44nC and a low input capacitance (Ciss) of 4500pF
• Integrated boot strap diode for efficient energy transfer
• High temperature operation up to 175°C
• AEC-Q101 qualified, making it suitable for automotive applications

Applications:

The FDWS86368-F085 is suitable for a wide range of power electronic applications, including:

• Motor control for industrial and automotive applications
• Power supplies for telecommunications, computing, and consumer electronics
• Renewable energy systems, such as solar inverters and wind turbines
• Battery management systems for electric and hybrid vehicles
• High-voltage switching applications in industrial automation and control systems

Overall, the FDWS86368-F085 is a high-performance MOSFET that offers excellent electrical characteristics and reliability, making it an ideal choice for a wide range of power electronic applications.