onsemi_FFSB10120A
original

onsemi
FFSB10120A

280-FFSB10120A
PDF Datasheet
SiC Diode, 1200V, 10A, D2PAK, 800-REEL
19 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Diode Element Material
SILICON CARBIDE
Diode Type
RECTIFIER DIODE
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FFSB10120A Description

FFSB10120A Description

The FFSB10120A is a high-performance Silicon Carbide (SiC) Schottky diode designed and manufactured by onsemi. This single diode offers exceptional technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry. With a base product number of FFSB10120, this diode is compliant with the RoHS3 standard and is classified under the EAR99 ECCN category.

FFSB10120A Features

  • Speed: The FFSB10120A boasts a No Recovery Time greater than 500mA (Io), ensuring fast switching capabilities.
  • Capacitance: It features a capacitance of 612pF @ 1V and 100kHz, providing efficient energy storage and discharge.
  • Reverse Recovery Time: With a 0 ns reverse recovery time (trr), this diode minimizes switching losses and improves overall efficiency.
  • Mounting Type: The FFSB10120A is designed for surface mount applications, making it suitable for compact and space-constrained designs.
  • Technology: Utilizing SiC technology, this diode offers superior thermal conductivity and higher voltage and current ratings compared to traditional silicon-based diodes.
  • Voltage Ratings: It has a maximum forward voltage (Vf) of 1.75 V @ 10 A and a maximum DC reverse voltage (Vr) of 1200 V, making it suitable for high-voltage applications.
  • Current Ratings: The FFSB10120A can handle an average rectified current (Io) of 21A and a reverse leakage current of 200 µA @ 1200 V.

FFSB10120A Applications

The FFSB10120A is ideal for various high-power and high-voltage applications, including:

  1. Power Supplies: Its high voltage and current ratings make it suitable for use in power supply circuits, where efficient energy conversion is critical.
  2. Automotive Applications: The FFSB10120A can be used in electric and hybrid vehicles for high-voltage power management and motor control systems.
  3. Renewable Energy Systems: This diode is well-suited for solar panel and wind turbine systems, where high-voltage and high-current ratings are essential for efficient energy conversion and management.
  4. Industrial Electronics: The FFSB10120A can be employed in industrial control systems and motor drives, where high-performance and reliability are paramount.

Conclusion of FFSB10120A

The FFSB10120A from onsemi is a powerful and versatile SiC Schottky diode that offers exceptional performance and reliability in high-voltage and high-current applications. Its unique features, such as a 0 ns reverse recovery time and superior SiC technology, provide significant advantages over traditional silicon-based diodes. With its wide range of applications, the FFSB10120A is an ideal choice for engineers and designers looking to enhance the performance and efficiency of their electronic systems.

FAQ

What voltage specification is listed for FFSB10120A?
The listed voltage-related specification for FFSB10120A is 1200.
What is FFSB10120A?
Are there related or alternative parts for FFSB10120A?
What package or case is FFSB10120A available in?
What operating temperature range does FFSB10120A support?
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