onsemi_FFSB2065B

onsemi
FFSB2065B  
Single Diodes

onsemi
FFSB2065B
280-FFSB2065B
Ersa
onsemi-FFSB2065B-datasheets-10178294.pdf
DIODE SIL CARB 650V 22.8A D2PAK
In Stock : 688

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FFSB2065B Description

FFSB2065B Description

The FFSB2065B from onsemi is a high-performance 650V, 22.8A Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. This surface-mount device is housed in a D2PAK package and is RoHS3 compliant, making it suitable for modern, environmentally conscious designs. With zero reverse recovery time (trr = 0 ns) and low forward voltage (1.7V @ 20A), it minimizes switching losses and improves system efficiency.

FFSB2065B Features

  • Zero Reverse Recovery Time (0 ns): Eliminates switching losses, ideal for high-frequency applications.
  • High Current Capability (22.8A avg.): Supports robust power handling in compact designs.
  • Low Forward Voltage (1.7V @ 20A): Reduces conduction losses for higher efficiency.
  • 650V Breakdown Voltage: Suitable for high-voltage power conversion systems.
  • SiC Schottky Technology: Offers superior thermal conductivity and reliability under high temperatures.
  • Surface-Mount D2PAK Package: Optimized for automated assembly and thermal management.
  • RoHS3 & REACH Compliant: Meets stringent environmental regulations.

FFSB2065B Applications

The FFSB2065B excels in applications requiring high efficiency, fast switching, and thermal stability, including:

  • Power Factor Correction (PFC) circuits in industrial and renewable energy systems.
  • High-frequency DC-DC converters for telecom and server power supplies.
  • Solar inverters and EV charging systems, where low losses and high reliability are critical.
  • Uninterruptible Power Supplies (UPS) and motor drives demanding minimal switching noise.

Conclusion of FFSB2065B

The FFSB2065B sets a benchmark for SiC Schottky diodes with its zero recovery time, high current rating, and low conduction losses. Its 650V rating and robust thermal performance make it a preferred choice for high-efficiency power electronics. Whether in renewable energy, industrial automation, or automotive systems, this diode delivers unmatched performance and reliability, ensuring long-term operational stability in demanding environments.

Tech Specifications

Configuration
PPAP
Product Status
Automotive
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Speed
SVHC Exceeds Threshold
Peak Reverse Current (uA)
Peak Reverse Repetitive Voltage (V)
Material
Package Length
Maximum Diode Capacitance (pF)
Series
Type
Tab
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Mounting Style
Vrrm - Repetitive Reverse Voltage
Product
Ir - Reverse Current
RoHS
Tradename
Vf - Forward Voltage
Ifsm - Forward Surge Current
Maximum Operating Temperature
If - Forward Current
USHTS

FFSB2065B Documents

Download datasheets and manufacturer documentation for FFSB2065B

Ersa Select FFSy REACTIVATION 11/Dec/2023      
Ersa Assembly Change 09/May/2023      
Ersa FFSB2065B      
Ersa Mult Dev Box Chgs 1/Jul/2021      
Ersa FFSB2065B      
Ersa Datasheet for PTI SIDA devices 21/Sep/2023      
Ersa onsemi RoHS       onsemi REACH      

Shopping Guide

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