The FFSB2065B from onsemi is a high-performance 650V, 22.8A Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. This surface-mount device is housed in a D2PAK package and is RoHS3 compliant, making it suitable for modern, environmentally conscious designs. With zero reverse recovery time (trr = 0 ns) and low forward voltage (1.7V @ 20A), it minimizes switching losses and improves system efficiency.
The FFSB2065B excels in applications requiring high efficiency, fast switching, and thermal stability, including:
The FFSB2065B sets a benchmark for SiC Schottky diodes with its zero recovery time, high current rating, and low conduction losses. Its 650V rating and robust thermal performance make it a preferred choice for high-efficiency power electronics. Whether in renewable energy, industrial automation, or automotive systems, this diode delivers unmatched performance and reliability, ensuring long-term operational stability in demanding environments.
Download datasheets and manufacturer documentation for FFSB2065B