onsemi

FFSB3065B-F085

FFSB3065B-F085 Description

The FFSB3065B-F085 from onsemi is a high-performance 650V, 73A Silicon Carbide (SiC) Schottky diode in a D2PAK surface-mount package, designed for demanding automotive and industrial applications. Leveraging SiC technology, it delivers superior efficiency with zero reverse recovery time (0 ns) and minimal switching losses, making it ideal for high-frequency power conversion. With a low forward voltage drop (1.7V @ 30A) and reverse leakage current of just 40 µA @ 650V, this diode ensures high reliability and thermal stability. Compliant with ROHS3, REACH, and automotive-grade (AEC-Q101) standards, it is packaged in Tape & Reel (TR) for automated assembly.

FFSB3065B-F085 Features

• Zero Recovery Time (0 ns trr): Eliminates reverse recovery losses, enhancing efficiency in high-speed switching.
• High Current Capability: 73A average rectified current (Io) with no recovery time above 500mA, suitable for high-power designs.
• Low Leakage & Forward Voltage: 40 µA @ 650V leakage and 1.7V @ 30A Vf minimize power dissipation.
• Automotive-Grade Reliability: Meets stringent AEC-Q101 qualifications for harsh environments.
• SiC Technology: Superior thermal conductivity and high-temperature operation compared to traditional Si diodes.
• Surface-Mount D2PAK: Optimized for PCB space efficiency and automated manufacturing.

FFSB3065B-F085 Applications

• Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from its high-voltage handling and efficiency.
• Renewable Energy: Solar inverters and wind power converters leverage its fast switching and low losses.
• Industrial Power Supplies: PFC circuits, UPS systems, and motor drives requiring high-frequency operation.
• Telecom/Server PSUs: Enhances efficiency in 48V-12V buck converters and ORing diodes.

Conclusion of FFSB3065B-F085

The FFSB3065B-F085 sets a benchmark for SiC Schottky diodes with its zero recovery time, high current density, and automotive-grade ruggedness. Its low conduction losses and thermal robustness make it a top choice for next-gen power electronics, particularly in EVs, renewables, and industrial systems. For engineers prioritizing efficiency, reliability, and miniaturization, this diode offers a future-proof solution.